savantic semiconductor product specification silicon npn power transistors 2SC3834 d escription switching transistor with to-220 package applications for humidifier ,dc-dc converter and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 8 v i c collector current (dc) 7 a i cm collector current-peak 14 a i b base current (dc) 3 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3834 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 120 v v ce(sat) collector-emitter saturation voltage i c =3a ;i b =0.3a 0.5 v v be(sat) base-emitter saturation voltage i c =3a; i b =0.3a 1.2 v i cbo collector cut-off current v cb =200v; i e =0 0.1 ma i ebo emitter cut-off current v eb =8v; i c =0 0.1 ma h fe-1 dc current gain i c =0.6a ; v ce =4v 70 250 h fe-2 dc current gain i c =3a ; v ce =4v 70 220 f t transition frequency i c =0.5a ; v ce =12v 30 mhz c ob collector output capacitance f=1mhz;v cb =10v 110 pf switching times t on turn-on time 0.5 s t s storage time 3.0 s t f fall time i c =3.0a i b1 =0.3a ,i b2 =-0.6a v cc =50v, rl=16.7 a 0.5 s h fe-2 classifications o y g 70-140 100-200 160-220
savantic semiconductor product specification 3 silicon npn power transistors 2SC3834 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3834
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